Chemical mechanical polishing method for manufacturing semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsYong Choi, Won Lee
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Abstract
Disclosed herein is a chemical mechanical polishing (CMP) method for manufacturing a semiconductor device, comprising performing partial ion implantation of dopants at different concentrations into a plurality of at least two divided regions of a wafer having a planarization-target film, and subjecting the partially ion implanted-wafer to a chemical mechanical polishing process. In accordance with the present invention, non-uniformity of the removal rate in a chemical mechanical polishing process is countervailed by dopants which are implanted at different concentrations via partial ion implantation, and thereby it is possible to polish the target film at a uniform removal rate.
Claims6
A chemical mechanical polishing method for manufacturing a semiconductor device, comprising:
- performing partial ion implantation of dopants at different concentrations into a plurality of at least two divided regions of a wafer having a planarization-target film;
- and
- subjecting the partially ion implanted-wafer to a chemical mechanical polishing process.
Dependencies are inferred from the claim text.