Dual-damascene process for manufacturing semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBang-Ching Ho, Jen-Chieh Shih
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Abstract
The present disclosure relates generally to the manufacturing of semiconductor devices, and more particularly to a dual-damascene process for the manufacturing of semiconductor devices. A method of forming a dual-damascene structure includes forming a via hole and filling the via hole at least partially with a first plug material. A portion of the first plug material is removed and the remaining via hole is filled with a second plug material. A portion of the second plug material can also be removed.
Claims20
A method of forming a dual-damascene structure, comprising:
- forming a via hole;
- filling the via hole at least partially with a first plug material;
- removing a portion of the first plug material;
- filling the remaining via hole with a second plug material;
- and
- removing a portion of the second plug material.
A partial semiconductor device, comprising a structure for forming a dual-damascene process, wherein the structure comprises:
- a via hole;
- a low etching rate plug material filling the bottom portion of the via hole;
- and
- a high etching rate plug material filling the upper portion of the via hole.
A method for forming a dual-damascene structure, comprising:
- forming a substrate;
- forming a dielectric layer over the substrate;
- etching a portion of the dielectric layer to form a via hole;
- filling the via hole at least partially with a low etching rate plug material;
- etching a portion of the low etching rate plug material;
- filling the remaining via hole with a high etching rate plug material;
- etching the high etching rate plug material, if the high etching rate plug material is not used as an anti-reflective coating layer or an under layer for a bi-layer process;
- and
- forming a dual-damascene opening.
The method of claim 17 wherein the trench opening of the dual-damascene opening is formed prior to forming the via opening of the dual-damascene opening.
Dependencies are inferred from the claim text.