Etch process for CD reduction of arc material
AssigneeAdvanced Micro Devices, Inc.
InventorsPhillip Jones, Mark Chang, Scott Bell
Life of this patent
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Abstract
A method of reducing critical dimensions of a feature in a anti-reflective coating layer structure can utilize a polymerizing agent. The anti-reflective coating structure can be utilized to form various integrated circuit structures. The anti-reflective coating can be utilized to form gate stacks comprised of polysilicon and a dielectric layer, conductive lines, or other IC structure. The polymerizing agent can include carbon, hydrogen and fluorine.
Claims20
A method of fabricating an integrated circuit, the method comprising:
- providing an anti-reflective coating layer above a substrate;
- providing a photoresist layer above the anti-reflective coating layer;
- patterning the photoresist layer;
- removing the anti-reflective coating layer in accordance with a first feature defined by the photoresist layer, wherein the removing includes providing a polymerizing gas, whereby the feature in the anti-reflective coating layer has a reduced critical dimension.
A method of fabricating an integrated circuit, the method comprising:
- providing an organic anti-reflective coating;
- and
- plasma dry etching the anti-reflective coating in accordance with a feature, the feature defining a spacing, wherein the plasma dry etching includes providing a polymerizing agent, whereby the spacing in the anti-reflective coating has a reduced critical dimension.
A method of forming a spacing for an integrated circuit, the method comprising steps of:
- providing an organic coating above a substrate or a layer above a substrate;
- patterning a photoresist layer above the organic coating;
- and
- selectively removing the organic coating in accordance with a feature, the coating being removed using a polymerizing agent.
Dependencies are inferred from the claim text.