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US 2006/0223273 A1Published application
Surface treatment in preparation for contact placement
AssigneeAgilent Technologies, Inc.
InventorsMartin Dvorak, Timothy Engel, Ronald Miller, Scott Lafrancois
Life of this patent
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Abstract
A contact is formed on indium-phosphide material. Regions of the indium-phosphide material are exposed. An energetic bombardment is performed on exposed regions of the indium-phosphide material. Metal is deposited on the exposed regions of the indium-phosphide material where energetic bombardment occurred.
Claims18
A method for forming a contact on indium-phosphide material, comprising:
- exposing regions of the indium-phosphide material;
- performing an energetic bombardment of exposed regions of the indium-phosphide material;
- and,
- depositing metal on the exposed regions of the indium-phosphide material where energetic bombardment occurred.
1 more element
A method for forming a contact region on a device, the method comprising:
- removing passivation material to expose contact regions of the device;
- performing an energetic bombardment of the exposed contact regions;
- and,
- depositing low-resistance Ohmic contact metal on the exposed contact regions where energetic bombardment occurred.
1 more element
Dependencies are inferred from the claim text.