Method of forming an electronic device

A method of forming an electronic device comprising:

• forming a gate dielectric layer over a substrate;
• forming a first mask over the gate dielectric layer, wherein the mask defines a first portion and a second portion of the gate dielectric layer, and wherein the first portion is an unexposed portion and the second portion is an exposed portion;
• etching the exposed portion of the gate dielectric layer to reduce a thickness of the exposed portion;
• removing the mask;
• and
• forming gate electrodes over the first and second portions.

A method of forming an electronic device comprising:

• forming a sacrificial layer over a substrate;
• implanting ions through the sacrificial layer and into the substrate;
• removing the sacrificial oxide layer;
• forming a first gate dielectric layer over the substrate;
• forming a first mask over the first gate dielectric layer, defining a first portion and a second portion of the first gate dielectric layer, wherein the first portion is an unexposed portion and the second portion is an exposed portion;
• etching the second portion of the first gate dielectric layer to reduce a thickness of the exposed portion;
• removing the first mask;
• forming a second mask over the first gate dielectric layer, defining a third and fourth portion of the first gate dielectric layer, wherein the third portion is an unexposed portion and the fourth portion is an exposed portion;
• etching the first portion of the first gate dielectric layer to reduce a thickness of the exposed portion;
• removing the second mask;
• forming a second gate dielectric layer after etching the first and second portions of the first gate dielectric layer;
• and
• forming a first gate electrode over the first portion of the first gate dielectric layer and a second gate electrode on the second portion of the gate dielectric layer.