Method for selectively stressing MOSFETs to improve charge carrier mobility
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Hao Chen, Chia-Lin Chen, Ju-Wang Hsu, Tze-Liang Lee, Shih-Chang Chen
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Abstract
A strained channel MOSFET device with improved charge mobility and method for forming the same, the method including providing a first gate with a first semiconductor conductive type and second gate with a semiconductor conductive type on a substrate; forming a first strained layer with a first type of stress on said first gate; and, forming a second strained layer with a second type of stress on said second gate.
Claims15
1-30. (canceled)
A MOSFET device pair with improved charge mobility comprising:
- a first gate with a first semiconductor conductive type and a second gate with a second semiconductor conductive type overlying a substrate:
- a first strained layer with a first type of stress overlying said first gate;
- and,
- a second strained layer with a second type of stress overlying said second gate.
Strained channel MOSFET devices with improved charge mobility comprising:
- a semiconductor substrate comprising N type and P type conductivity polysilicon gate electrodes;
- a first strained dielectric layer having primarily a tensile stress overlying the N type conductivity gate electrodes and a second strained dielectric layer having primarily a compressive stress overlying the P type conductivity gate electrodes;
- and,
- strained channel regions in the semiconductor substrate underlying the respective polysilicon gate electrodes comprising a strain transferred from at least one of the respective polysilicon gate electrodes and the respective first and second strained layers.
44-49. (canceled)
Dependencies are inferred from the claim text.