Field effect transistor and an operation method of the field effect transistor
AssigneePanasonic Corporation
InventorKazunori Isogai
Life of this patent
Estimating the term…
Abstract
A field effect transistor includes a silicon substrate, a source electrode and a drain electrode which are formed in upper portions of the silicon substrate, and an insulator film, a PCMO film, and a gate electrode which are formed on part of the silicon substrate sandwiched between the source electrode and the drain electrode. Data writing is performed by changing a voltage level of a write voltage applied to the PCMO film, and data reading is performed by applying a read voltage to the PCMO film and detecting a drain current.
Claims10
A field effect transistor comprising:
- a semiconductor substrate;
- a gate electrode;
- and
- a gate insulator provided between the semiconductor substrate and the gate electrode, and having a capacitance that changes according to an applied voltage.
An operation method of a field effect transistor in which a gate insulator and a gate electrode are provided on a semiconductor substrate in the stated order, the gate insulator having a capacitance that changes according to an applied voltage, comprising steps of:
- applying an intermediate voltage between two threshold voltages corresponding to two capacitances, to the gate electrode as a read voltage;
- and
- detecting whether a drain current flows as a result of the application of the read voltage.
An operation method of a field effect transistor in which a gate insulator and a gate electrode are provided on a semiconductor substrate in the stated order, comprising a step of
- changing a capacitance of the gate insulator by changing at least one of a voltage level, a pulse width, and a number of applications of a voltage pulse applied to the gate insulator.
Dependencies are inferred from the claim text.