Back to results
US 2006/0223245 A9Published application
T-gate formation
AssigneesRohm and Haas Electronic Materials LLC, ASML Netherlands B.V.
InventorsRudy Pellens, Frank Linskens
Life of this patent
Estimating the term…
Abstract
Methods of forming T-gate structures on a substrate are provided that use only UV-sensitive photoresists. Such methods provide T-gate structures using two lithographic steps using a single wavelength of radiation.
Claims11
The present invention provides a method for forming a T-gate on a substrate including the steps of:
- a) providing a substrate;
- b) optionally disposing an organic planarizing layer on the substrate;
- c) disposing a layer of a UV-sensitive first photoresist;
- d) patterning the first photoresist by exposing the first photoresist to UV radiation through a mask and developing the exposed first photoresist to define a first opening for a base of the T-gate;
- e) transferring the pattern to the planarizing layer if present;
- f) rendering the pattern insensitive to the UV-radiation;
- g) disposing a layer of a UV-sensitive second photoresist, the second photoresist being negative-acting;
- h) patterning the second photoresist by exposing the second photoresist to the UV radiation through a mask and developing the exposed second photoresist to define a second opening for a cap of the T-gate over the first opening;
- and
- i) depositing a conductive material within the first and second openings to form a T-gate.
7 more elements
A method for forming a T-gate structure comprising the steps of:
- a) providing a substrate;
- b) disposing a layer of a UV-sensitive first photoresist on the substrate;
- patterning the first photoresist by exposing the first photoresist to UV radiation through a mask and developing the exposed first photoresist to define a first opening for a base of the T-gate;
- and curing the patterned first photoresist;
- c) disposing a layer of a UV-sensitive second photoresist on the cured first photoresist wherein the second photoresist is negative-acting;
- d) patterning the second photoresist by exposing the second photoresist to the UV radiation through a mask and developing the exposed second photoresist to define a second opening for a cap of the T-gate over the first opening;
- e) depositing a conductive material within the first and second openings to form a T-gate;
- and
- f) removing the first and second photoresists.
6 more elements
The method okf claim 9 wherein the UV radiation has a wavelength of 248 nm.
A method for forming a T-gate structure comprising the steps of:
- a) providing a substrate;
- b) disposing an organic planarizing layer on the substrate, disposing a layer of a UV-sensitive first photoresist on the organic planarizing layer, patterning the first photoresist by exposing the first photoresist to UV radiation through a mask and developing the exposed first photoresist to define a first opening for a base of the T-gate, transferring the first opening to the organic planarizing layer, and removing the first photoresist to provide a patterned organic planarizing layer;
- c) disposing a layer of a UV-sensitive second photoresist on the patterned organic planarizing layer wherein the second photoresist is negative-acting;
- d) patterning the second photoresist by exposing the second photoresist to the UV radiation through a mask and developing the exposed second photoresist to define a second opening for a cap of the T-gate over the first opening;
- e) depositing a conductive material within the first and second openings to form a T-gate;
- and
- f) removing the second photoresist.
4 more elements
Dependencies are inferred from the claim text.