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US 2006/0223242 A1Published application
Method of forming a crack stop void in a low-k dielectric layer between adjacent fusees
AssigneeInternational Business Machines Corporation
InventorsTimothy Daubenspeck, Christopher Muzzy, Paul McLaughlin, Judith Wright, Jean Wynne, Dae Jung
Life of this patent
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Abstract
A crack stop void is formed in a low-k dielectric layer between adjacent fuse structures for preventing propagation of cracks between the adjacent fuse structures during a fuse blow operation. The crack stop void is formed simultaneously with the formation of an interconnect structure.
Claims20
A method comprising the steps of:
- providing a substrate including a plurality of fuse structures formed thereupon;
- and
- simultaneously forming a material-free region between adjacent ones of said fuse structures while removing a portion of a conductor layer to form an interconnect structure.
A method comprising the steps of:
- providing a substrate including a plurality of fuse structures formed in a first dielectric layer;
- forming at least a second dielectric layer over said plurality of fuse structures;
- forming an opening in said at least second dielectric layer between adjacent ones of said fuse structures;
- forming a conductor layer on said second dielectric layer filling said opening;
- and
- patterning said conductor layer to simultaneously form a first interconnect structure and a void in said opening, wherein said void prevents propagation of cracks between said adjacent fuse structures during a fuse blow operation.
3 more elements
Dependencies are inferred from the claim text.