Methods and structures to form precisely aligned stacks of 3-dimensional stacks with high resolution vertical interconnect
OwnerRobert Bowerinventor
Life of this patent
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Abstract
Methods and structures to form precisely aligned stacks of 3-dimensional stacks with high resolution vertical interconnections, and associated stacks, structures and devices. Viewing ports are formed in a first nanostructure layer through which an alignment pattern on-a second nanostructure layer is visible when the first and second nanostructure layers are held in near contact before attachment. The second nanostructure layer is then aligned with the first nanostructure layer by viewing the alignment pattern through the viewing ports. Once the layers are aligned, the second nanostructure layer is attached to the first nanostructure layer.
Claims24
A method for forming a stack of nanostructure layers, comprising:
- a) forming a plurality of viewing ports in a first nanostructure layer through which an alignment pattern on a second nanostructure layer is visible when said first and second nanostructure layers are held in near contact before attachment;
- b) aligning said second nanostructure layer with said first nanostructure layer by viewing said alignment pattern through said viewing ports;
- and
- c) attaching said second nanostructure layer to said first nanostructure layer after alignment with said first nanostructure.
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Dependencies are inferred from the claim text.