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US 2006/0223203 A1Published application
Advanced process control model incorporating a target offset term
AssigneeAdvanced Micro Devices, Inc.
InventorsUwe Schulze, Martin Mazur, Andreas Becker
Life of this patent
Estimating the term…
Abstract
An advanced process control (APC) architecture comprising a process model that incorporates a target offset term is provided. The APC architecture may be applied to a so-called develop inspect critical dimension (DICD) model using the target offset term to correct at least one exposure parameter on the occurrence of an abrupt event. A corresponding event may, for example, concern a modified reflectivity of processed substrates, for example due to a rework of substrates covered by amorphous carbon material.
Claims35
A method, comprising:
- providing a processed substrate having a rework status representative of a number of rework processes performed on said substrate;
- and
- exposing a photoresist layer provided above said substrate, wherein at least one exposure parameter is determined by an advanced process controller at least on the basis of said rework status.
A method, comprising:
- exposing a photoresist layer provided above a first substrate;
- developing said photoresist layer;
- obtaining information about said developed photoresist layer representative of a process status;
- providing a second substrate having a rework status representative of a number of rework processes being performed on said substrate;
- and
- determining at least one exposure parameter for a photoresist layer formed on said second substrate on the basis of said information and of said rework status.
3 more elements
A method, comprising:
- providing an advanced process controller comprising a process model comprising a target term and a target offset term;
- updating said target offset term on the occurrence of an event;
- and
- determining at least one process parameter from said process model.
1 more element
Dependencies are inferred from the claim text.