US 2006/0223198 A1 · Semiconductor device and fabricating method of the same

Abstract

An Al2O3 film with a thickness greater than that of a wiring is formed as a protective film, and then the Al2O3 film is polished by CMP until a conductive barrier film is exposed. Namely, CMP is applied to the Al2O3 film by utilizing the conductive barrier film as a stopper film. Next, a silicon oxide film is formed over the entire surface by, for example, a high-density plasma method, and then the surface thereof is flattened. Subsequently, another Al2O3 film is formed on the silicon oxide film as a protective film for preventing intrusion of hydrogen or moisture. Further, another silicon oxide film is formed on the Al2O3 film, for example, by a high-density plasma method. Then, a via hole reaching the conductive barrier film is formed through the silicon oxide film, the Al2O3 film and the silicon oxide film, and then a W plug is embedded therein.

Claims16

Dependent claims

A semiconductor device comprising:

a ferroelectric capacitor having an electrode;
an insulation film suppressing intrusion of hydrogen or moisture into said ferroelectric capacitor, said insulation film including a gap in which a wiring connected to the electrode of said ferroelectric capacitor is formed;
and
a wiring layer including a wiring formed in the gap in said insulation film and connected to the electrode of said ferroelectric capacitor, the surface of the wiring being exposed from said insulation film.

1 more element

Dependencies are inferred from the claim text.

Semiconductor device and fabricating method of the same

Life of this patent

Semiconductor device and fabricating method of the same

Life of this patent

Abstract

Claims16