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US 2006/0223000 A1Published application
Method of reducing sensitivity of EUV photoresists to out-of-band radiation and EUV photoresists formed according to the method
AssigneeIntel Corporation
InventorsManish Chandhok, Wang Yueh, Heidi Cao
Life of this patent
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Abstract
A modified EUV photoresist and a method of making the resist. The modified resist includes an EUV photoresist and a LAM incorporated into the EUV photoresist.
Claims30
A method of making a modified EUV photoresist comprising:
- providing an EUV photoresist;
- providing a light absorbance material (LAM);
- and
- incorporating the LAM into the EUV photoresist to make the modified EUV photoresist.
1 more element
A modified EUV photoresist comprising:
- an EUV photoresist;
- and
- a LAM incorporated into the EUV photoresist to make the modified EUV photoresist.
A mixture comprising:
- a composition including:
- a resin having photoacid-labile groups;
- and
- at least one photoacid generator compound;
- and
- a LAM blended into the composition.
3 more elements
Dependencies are inferred from the claim text.