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US 2006/0221712 A1Published application
Using a bit specific reference level to read a memory
AssigneeOvonyx, Inc.
InventorsTyler Lowrey, Ward Parkinson, Ferdinando Bedeschi, Claudio Resta, Roberto Gastaldi, Giulio Casagrande
Life of this patent
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Abstract
A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.
Claims30
A method comprising:
- reading a cell on a memory cell line of a memory by developing a reference level from the memory cell line.
A memory comprising:
- an array of cells;
- and
- a sense amplifier to sense a selected cell, said sense amplifier coupled to compare a characteristic of a sensed cell to a reference level developed using said cell.
A system comprising:
- a processor;
- and
- a memory including an array of cells and a sense amplifier to sense said cells, said sense amplifier coupled to compare characteristic of a sensed cell to a reference developed using said cell.
Dependencies are inferred from the claim text.