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US 2006/0220250 A1Published application
Crack stop and moisture barrier
AssigneeInfineon Technologies AG
InventorsSun-Oo Kim, O Park
Life of this patent
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Abstract
A design for a crack stop and moisture barrier for a semiconductor device includes a plurality of discrete conductive features formed at the edge of an integrated circuit proximate a scribe line. The discrete conductive features may comprise a plurality of staggered lines, a plurality of horseshoe-shaped lines, or a combination of both.
Claims22
A semiconductor device, comprising:
- an integrated circuit, the integrated circuit having a peripheral region proximate a scribe line;
- and
- a crack prevention and moisture barrier formed at the peripheral region of the integrated circuit, the crack prevention and moisture barrier comprising a plurality of discrete conductive features.
A semiconductor device, comprising:
- an integrated circuit, the integrated circuit having a peripheral region;
- and
- a crack prevention structure formed proximate the peripheral region of the integrated circuit, the crack prevention structure comprising a plurality of staggered conductive lines arranged in a plurality of rows.
A semiconductor device, comprising:
- an integrated circuit, the integrated circuit having a peripheral region;
- and
- a crack prevention structure formed proximate the peripheral region of the integrated circuit, the crack prevention structure comprising a plurality of horseshoe-shaped conductive lines arranged in at least one row.
A method of manufacturing a semiconductor device, the method comprising:
- manufacturing a plurality of integrated circuits on a semiconductor wafer, each of the integrated circuits comprising a peripheral region;
- forming a crack prevention structure proximate the peripheral region of each of the plurality of integrated circuits, the crack prevention structure comprising a plurality of discrete conductive features;
- and
- separating the plurality of integrated circuits from one another proximate the crack prevention structure of each integrated circuit.
1 more element
Dependencies are inferred from the claim text.