Semiconductor wafer having multiple semiconductor elements and method for dicing the same
AssigneeDenso Corporation
InventorsMakoto Asai, Muneo Tamura, Kazuhiko Sugiura, Tetsuo Fujii
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AssigneeDenso Corporation
InventorsMakoto Asai, Muneo Tamura, Kazuhiko Sugiura, Tetsuo Fujii
Estimating the term…
A semiconductor wafer includes: a first layer having a first refraction index; a second layer having a second refraction index, which is different from the first refraction index; a plurality of semiconductor elements; and a layer removal region. The semiconductor elements are capable of being separated each other by irradiating a laser beam on the first layer along with a cutting line. The laser beam irradiation provides a modified region in the first layer so that the semiconductor elements are capable of being separated by a crack generated in the modified region. The layer removal region is provided such that the second layer in the layer removal region is removed from the wafer.
A semiconductor wafer comprising:
A method for dicing a semiconductor wafer, which includes a first layer having a first refraction index, a second layer having a second refraction index, a plurality of semiconductor elements disposed in the first and/or second layers, and a layer removal region, wherein the first refraction index is different from the second refraction index, and wherein the first layer and the second layer are stacked in this order, the method comprising the steps of:
A semiconductor wafer comprising:
Dependencies are inferred from the claim text.