Semiconductor device
OwnerIchiro Haseinventor
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Abstract
There is provided a semiconductor device capable of ensuring a complete enhancement-mode operation and realizing a power transistor excellent in the low-distortion, high-efficiency performance. On a surface of a substrate (1) composed of single crystal GaAs, a second barrier layer (3) composed of AlGaAs, a channel layer (4) composed of InGaAs, a third barrier layer (12) composed of InGaP and a first barrier layer (11) composed of AlGaAs are stacked in this order, while placing in between a buffer layer (2). Relation of χ1−χ3≦0.5*(Eg3-Eg1), where χ1 is electron affinity of the first barrier layer (11), Eg1 is a band gap of the same, χ3 is electron affinity of the third barrier layer (12), and Eg3 is a band gap of the same, is satisfied between the first barrier layer (11) and the third barrier layer (12).
Claims18
A semiconductor device having a source electrode, a drain electrode, a gate electrode disposed between the source electrode and the drain electrode, and a channel layer composed of a semiconductor which serves as a current path between the source electrode and the drain electrode, characterized by comprising:
- a first barrier layer composed of a semiconductor having a p-type conductive region doped with a p-type impurity of high concentration under the gate,
- a second barrier layer disposed on an opposite side of said first barrier layer while placing said channel layer in between and is composed of a semiconductor having an electron affinity smaller than that of said channel layer, and
- a third barrier layer disposed between said first barrier layer and said channel layer and is composed of a semiconductor having an electron affinity smaller than that of said channel layer, wherein a relation below:
- χ1−χ3≦0.5*(Eg3−Eg1) (1)
- is satisfied, where χ1 is electron affinity of said first barrier layer, Eg1 is a band gap thereof, χ3 is electron affinity of said third barrier layer, and Eg3 is a band gap thereof.
Dependencies are inferred from the claim text.