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US 2006/0220143 A1Published application
Semiconductor device and manufacturing method of the same
AssigneeFujitsu Limited
InventorKazuto Ikeda
Life of this patent
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Abstract
Patterning is performed in such a manner that an end portion fabricated of a second gate insulating film partially overlaps an end portion fabricated of a first gate insulating film. Then, a surface recovery treatment is performed in the aforementioned state where the first and second gate insulating films partially overlap each other.
Claims17
A manufacturing method of a semiconductor device, comprising the steps of:
- subjecting a surface of a semiconductor substrate to element isolation to demarcate a first active region and a second active region;
- forming a first gate insulating film on the first active region and the second active region;
- fabricating the first gate insulating film and leaving the first gate insulating film in such a manner that an end portion fabricated of the first gate insulating film is located on any portion other than a first gate electrode forming region in the first active region and a second gate electrode forming region in the second active region;
- forming a second gate insulating film on the first active region and the second active region, including on the first gate insulating film;
- fabricating the second gate insulating film and leaving the second gate insulating film in such a manner that an end portion fabricated of the second gate insulating film overlaps the end portion fabricated of the first gate insulating film;
- simultaneously subjecting a surface of the first gate insulating film and a surface of the second gate insulating film to a surface recovery treatment;
- and
- pattern-forming a first gate electrode on the first gate electrode forming region with the first gate insulating film therebetween and a second gate electrode on the second gate electrode forming region with the second gate insulating film therebetween, respectively.
5 more elements
A semiconductor device including at least two types of transistors on a semiconductor substrate, wherein
- one of the transistors comprises:
- a first gate insulating film which is made of a silicon oxide or a silicon oxynitride and whose surface layer is brought into a nitrided state with a higher nitrogen content or an oxynitrided state with a higher oxygen and nitrogen content than portions other than the surface layer;
- and
- a first gate electrode which is pattern-formed with the first gate insulating film in between, and
- the other of the transistors comprises:
- a second gate insulating film which is made of a high dielectric constant film and whose surface layer is brought into the nitrided state or the oxynitrided state;
- and
- a second gate electrode which is pattern-formed with the second gate insulating film in between.
5 more elements
Dependencies are inferred from the claim text.