Electro-static discharge protection circuit and semiconductor device having the same

A semiconductor device, comprising:

• a first internal circuitry;
• an external source voltage supply line which supplies an external source voltage to the internal circuitry;
• an internal source voltage supply line which supplies an internal source voltage to the internal circuitry;
• an internal fixed voltage supply line which supplies an internal fixed voltage to the internal circuitry;
• at least one electrostatic protection circuit, each electrostatic protection circuit further comprising:
• a first thyristor rectifier circuit electrically coupled to the first internal circuitry, the external source voltage supply line, and the internal fixed voltage supply line;
• a first current control circuit electrically coupled to the internal source voltage supply line and the first thyristor rectifier circuit, the first current control circuit restricting a current from flowing from the external source voltage supply line to the internal source voltage supply line through the first thyristor rectifier circuit when the external source voltage supply line becomes greater than the internal source voltage supply line, the first current control circuit making a surge current flow to the internal fixed voltage supply line through the first thyristor rectifier circuit by triggering the first thyristor rectifier circuit into a thyristor mode by means of the surge current applied to the external source voltage supply line in order to protect the first internal circuitry from the surge current.