Hybrid fully SOI-type multilayer structure
OwnerFabrice Letertre, Carlos Mazureinventors
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Abstract
The invention relates to a silicon-on-insulator-type multilayer structure that includes a support layer, at least two working layers having different crystalline orientations, and an insulating layer extending over at least a portion of the support layer. This insulating layer extends over the whole surface of the support layer so as to extend completely between the support layer and the working layers. A process for manufacturing such a structure is also provided.
Claims25
A silicon-on-insulator-type multilayer structure comprising a support layer, at least two working layers having different crystalline orientations, and an insulating layer for electrically isolating the support layer from the working layers.
A process for manufacturing a silicon-on-insulator-type multilayer structure that includes a support layer, at least two working layers having different crystalline orientations, and an insulating layer for electrically isolating the support layer from the working layers, which method comprises:
- providing an intermediate structure that includes the support layer, the insulating layer and a first working layer having an exposed surface;
- and
- subsequently associating the second working layer upon the exposed surface of the first working layer of the intermediate structure to form the silicon-on-insulator-type multilayer structure.
Dependencies are inferred from the claim text.