Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device including a bipolar transistor, the bipolar transistor including a first conduction type semiconductor substrate having a main surface, a second conduction type collector region formed in the semiconductor substrate, a shallow trench isolation structure for isolating the main surface of the semiconductor substrate into two insulated active regions, a collector leading portion formed in one of the active regions, and a first conduction type base region and a second conduction type emitter region formed on the other one of the active regions, the method comprising:

• forming the shallow trench isolation structure in the main surface of the semiconductor substrate;
• forming the collector region by performing ion implantation on the semiconductor including the shallow trench isolation structure at an angle orthogonal to the main surface;
• and
• forming the base region and the emitter region on the semiconductor including the collector region.