Semiconductor device and manufacturing method of the same
AssigneeFujitsu Limited
InventorKo Nakamura
Life of this patent
Estimating the term…
Abstract
After a ferroelectric capacitor is formed, a cap film made of Ti or Ir is formed on a top electrode of the ferroelectric capacitor. Thereafter, an alumina film which covers the ferroelectric capacitor is formed as a protective film. Further, a SiO2 film which covers the ferroelectric capacitor with the alumina film therebetween is formed by a sputtering method. After an interlayer insulating film is formed, holes which reach the cap film and a bottom electrode are respectively formed, and a barrier metal film made of Ti or TiN and a W film are formed therein.
Claims19
A semiconductor device, comprising
- a ferroelectric capacitor;
- a first insulating film covering said ferroelectric capacitor and inhibiting penetration of moisture into said ferroelectric capacitor;
- and
- a second insulating film with higher fabricability than said first insulating film covering said ferroelectric capacitor with said first insulating film therebetween and inhibiting penetration of moisture into said ferroelectric capacitor.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a ferroelectric capacitor;
- forming a first insulating film which covers the ferroelectric capacitor and inhibits penetration of moisture into the ferroelectric capacitor;
- and
- forming a second insulating film with higher fabricability than the first insulating film which covers the ferroelectric capacitor with the first insulating film therebetween and inhibits penetration of moisture into the ferroelectric capacitor.
Dependencies are inferred from the claim text.