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US 2006/0220072 A1Published application
Vertical junction field effect transistor having an epitaxial gate
AssigneeCree, Inc.
InventorsChristopher Harris, Andrei Konstantinov, Cem Basceri
Life of this patent
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Abstract
A vertical junction field effect transistor includes a trench formed in an epitaxial layer. The trench surrounds a channel region of the epitaxial layer. The channel region may have a graded or uniform dopant concentration profile. An epitaxial gate structure is formed within the trench by epitaxial regrowth. The epitaxial gate structure may include separate first and second epitaxial gate layers, and may have either a graded or uniform dopant concentration profile.
Claims31
A vertical junction field effect transistor comprising:
- a vertical channel region of a first conductivity type over a drain region;
- a trench surrounding the vertical channel region;
- an epitaxial gate of a second conductivity type opposite the first conductivity type, formed on sidewalls and a bottom of the trench;
- and
- a source region over an upper surface of the vertical channel region.
2 more elements
A vertical channel field effect transistor comprising:
- a drain layer of a first conductivity type formed on a substrate;
- a blocking drift layer of the first conductivity type formed on the drain layer;
- a first layer of the first conductivity type formed on the blocking drift layer, the first layer having a dopant profile that is graded in the vertical direction;
- a trench formed in the first layer, the trench surrounding and defining a channel region within the first layer;
- a first epitaxial gate layer of a second conductivity type opposite the first conductivity type conformally formed on sidewalls and a bottom of the trench;
- a second epitaxial gate layer of the second conductivity type conformally formed on the first epitaxial gate layer;
- and
- a source layer of the first conductivity type formed on the channel region.
5 more elements
Dependencies are inferred from the claim text.