Concentration-graded alloy sputtering target
OwnerChia-Hong Jan, Brett Schroeder +1inventors
InventorsChia-Hong Jan, Brett Schroeder, Robert Wu
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Abstract
A sputtering target comprising a concentration-graded alloy is utilized to achieve a uniform seed layer across a microelectronic wafer for the formation of microelectronic device interconnects. The concentration-graded alloy sputtering target achieves the substantially uniform seed layer by counteracting the affects of a sputtering system which would normally result in a non-inform seed layer if a single/uniform concentration sputtering target were used.
Claims19
A sputtering target comprising an alloy material having a desired deposition material concentration greater proximate an edge of said sputtering target relative to a center of said sputtering target.
A method of sputtering a material layer, comprising:
- providing a vacuum chamber;
- placing a sputtering target, comprising an alloy material having a desired deposition material concentration greater proximate an edge of said sputtering target relative to a center of said sputtering target, within said vacuum chamber;
- placing a substrate within said vacuum chamber;
- evacuating said vacuum chamber and backfilling said vacuum chamber with an inert gas;
- striking a plasma within said vacuum chamber;
- and
- sputtering material from said sputtering target to deposit on said substrate.
A method of fabricating a concentration-graded alloy sputtering target, comprising:
- providing an alloy material in a substantially liquid form including a desired deposition material and a carrier material;
- physically separating at least a portion of said desired deposition material to increase a concentration of said desired deposition material at an edge of said alloy material;
- and
- solidifying said alloy material.
A method of fabricating a concentration-graded alloy sputtering target, comprising:
- forming a first target portion having a first concentration of a desired deposition material;
- and
- forming at least one target portion of a second concentration of said desired deposition material about said first target portion.
Dependencies are inferred from the claim text.