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US 2006/0219168 A1Published application
Solid precursor vaporization system for use in chemical vapor deposition
AssigneeTokyo Electron Limited of TBS Broadcast Center
InventorJozef Brcka
Life of this patent
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Abstract
A solid precursor vaporization system configured for use in a deposition system, such as thermal chemical vapor deposition (TCVD), is described. The solid precursor vaporization system comprises a plurality of concentric solid precursor cylinders supported on a gas distribution plate and configured to provide a substantially constant surface area as solid precursor is consumed.
Claims30
A film precursor vaporization system configured to be coupled to a thin film deposition system comprising:
- a container comprising an outer wall and a bottom;
- a lid configured to be sealably coupled to said container, said lid comprising an outlet configured to be sealably coupled to said thin film deposition system;
- a gas distribution plate having one or more openings formed there-through, positioned in said container substantially near said bottom of said container to form a plenum with said outer wall and said bottom of said container, wherein said plenum is coupled to a carrier gas supply system configured to supply a carrier gas to said container;
- and
- one or more cylindrical solid precursor elements comprising a solid precursor supported by said gas distribution plate and positioned within said container to form one or more cylindrical spaces in general alignment with said one or more openings in said gas distribution plate through which said carrier gas can flow from said plenum to said outlet in said lid,
- wherein said film precursor vaporization system is configured to heat said solid precursor to a vaporization temperature to form a film precursor vapor and to transport said film precursor vapor in said carrier gas through said outlet to the thin film deposition system.
3 more elements
A deposition system for forming a thin film on a substrate comprising:
- a process chamber having a substrate holder configured to support said substrate and heat said substrate;
- a vapor distribution system coupled to said process chamber and configured to introduce film precursor vapor above said substrate;
- a pumping system configured to evacuate said process chamber;
- a film precursor vaporization system configured to vaporize a film precursor, and to transport said film precursor vapor in a carrier gas, wherein said film precursor vaporization system comprises:
- a container comprising an outer wall and a bottom;
- a lid sealably coupled to said container, said lid comprising an outlet sealably coupled to said vapor distribution system;
- a gas distribution plate having one or more openings formed there-through, positioned in said container substantially near said bottom of said container to form a plenum with said outer wall and said bottom of said container;
- a gas channel extending from said lid through said outer wall of said container to said bottom of said container, and coupled to said plenum;
- one or more cylindrical solid precursor elements comprising a solid precursor supported by said gas distribution plate and positioned within said container to form one or more cylindrical spaces in general alignment with said one ore more openings in said gas distribution plate;
- and
- at least one heater element coupled to at least one of said container or said one or more cylindrical solid precursor elements, wherein said heater element is configured to heat said one or more cylindrical solid precursor elements to a vaporization temperature to form said film precursor vapor;
- and
- a carrier gas supply system sealably coupled through said lid to said gas channel and configured to supply said carrier gas through said gas channel to said plenum and through said openings and said cylindrical spaces to said outlet in said lid for transporting said film precursor vapor to said process chamber.
10 more elements
Dependencies are inferred from the claim text.