Method for removing silicon oxide film and processing apparatus
AssigneeTokyo Electron Limited
InventorsKazuhide Hasebe, Mitsuhiro Okada, Takashi Chiba, Jun Ogawa
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Abstract
A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vessel 18 that can be evacuated uses a mixed gas containing HF gas and NH3 gas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NH3 gas.
Claims15
A silicon dioxide film removing method of removing a silicon dioxide film formed on a surface of a workpiece in a processing vessel that can be evacuated;
- characterized in using a mixed gas containing HF gas and NH3 gas for remove the silicon dioxide film.
A processing system comprising:
- a workpiece holding means for holding workpieces;
- a heating means for heating the workpieces;
- an evacuating system for evacuating the processing vessel;
- an HF gas supply system for supplying HF gas into the processing vessel;
- and
- an NH3 gas supply system for supplying NH3 gas into the processing vessel.
Dependencies are inferred from the claim text.