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US 2006/0216890 A1Published application
Method of fabricating flash memory device
AssigneeHynix Semiconductor Inc.
InventorMyung Ahn
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Abstract
A method of fabricating a flash memory device, including the steps of (a) forming floating gate patterns on predetermined regions of a semiconductor substrate, (b) forming an interlayer dielectric film on a predetermined region of the semiconductor substrate, including the floating gate patterns, (c) depositing a polysilicon film for a control gate on the entire surface, (d) etching-back the surface of the polysilicon film for the control gate by means of a chemical sputtering process, and (e) forming a tungsten film on the polysilicon film for control gate.
Claims14
A method of fabricating a flash memory device, the method comprising:
- (a) forming floating gate patterns on predetermined regions of a semiconductor substrate;
- (b) forming an interlayer dielectric film on a predetermined region of the semiconductor substrate, including the floating gate patterns;
- (c) depositing a polysilicon film for a control gate on the entire surface;
- (d) etching back the surface of the polysilicon film for the control gate by means of a chemical sputtering process;
- and
- (e) forming a tungsten film on the polysilicon film for the control gate.
3 more elements
Dependencies are inferred from the claim text.