The memory cell and cell array for embedded system
AssigneeBeedar Technology Inc.
InventorsPingFu Hsieh, HungJu Wang, TsaiHeng Su, ChihChe Cheng
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Abstract
In the present applications of electronic products, nonvolatile memory such as EEPROM and flash is employed widely for data storage. However, traditional nonvolatile memory needs specific process to be fabricated in foundries so that the integration shows difficulty among nonvolatile memory, analog, and digital portions. Thus, the invention is issued to provide the creative method for generic monolithic CMOS process in foundries, to be integrated into the system conveniently, and to advance the time to market. The structure and operation of cell and cell array is interpreted as following.
Claims16
A method of designing and fabricating non-volatile memory comprising:
- a physical structure of N-transistor or P-transistor EEPROM cells in generic monolithic CMOS process.
- an array structure of N-transistor or P-transistor EEPROM cells in generic monolithic CMOS process.
A structure of non volatile memory of one bit comprising:
- a structure of a single cell with reference to the global one;
- a structure of a pair of cells with opposite operation;
- an array structure of N-transistor or P-transistor EEPROM cells in generic monolithic CMOS process.
Dependencies are inferred from the claim text.