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US 2006/0216880 A1Published application
FINFET devices and methods of fabricating FINFET devices
OwnerHiroyuki Sutoinventor
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Abstract
A semiconductor device includes a plurality of fins formed over the substrate in parallel, the fins including a first fin and a second fin adjacent to the first fin, a gate electrode formed over the substrate, the gate electrode covering a portion of the fins, and a semiconductor layer formed over the fins, the semiconductor layer electrically connecting the first fin and the second fin, the semiconductor layer and the fins forming a source region and a drain region including an impurity ion.
Claims19
A semiconductor device, comprising:
- a substrate;
- a plurality of fins formed over the substrate in parallel, the fins including a first fin and a second fin adjacent to the first fin;
- a gate electrode formed over the substrate, the gate electrode covering a portion of the fins;
- and
- a semiconductor layer formed over the fins, the semiconductor layer electrically connecting the first fin and the second fin, the semiconductor layer and the fins forming a source region and a drain region including an impurity ion.
2 more elements
A method of making a semiconductor device, comprising:
- forming a plurality of fins on a substrate in parallel, the fins including a first fin and a second fin adjacent to the first fin;
- forming a gate electrode over the substrate, the gate electrode covering a portion of the fins;
- providing a semiconductor layer over the fins, the semiconductor layer electrically connecting the first fin to the second fin;
- and
- implanting an impurity ion in the fins and the semiconductor layer to form a source region and a drain region.
2 more elements
Dependencies are inferred from the claim text.