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US 2006/0216649 A1Published application
Reduced pitch multiple exposure process
AssigneeASML Netherlands B.V.
InventorsTheodore Paxton, Todd Davis, Todd Hiar, Cassandra Owen, Steven Hansen
Life of this patent
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Abstract
A lithographic method to enhance image resolution in a lithographic cluster using multiple projections and a lithographic cluster used to project multiple patterns to form images that are combined to form a patterned image having enhanced resolution.
Claims43
A method for enhancing image resolution in a lithographic cluster, comprising:
- coating a surface of substrate with a developable material layer;
- coating a first resist layer on top of the developable material layer;
- projecting a first pattern onto an area of the substrate coated with the developable material layer and the first resist layer;
- coating a second resist layer on top of the developable material layer;
- and
- projecting a second pattern onto an area of the substrate coated with the developable material layer and the second resist layer,
- wherein projecting the first pattern and projecting the second pattern produces a desired patterned image on the developable material layer.
4 more elements
A lithographic cluster comprising:
- a coating station configured to apply a developable material layer onto a substrate and to apply a first and a second resist layer on top of the developable material layer;
- a projection apparatus configured to project a first pattern of a first patterning device onto the substrate and to project a second pattern of a second patterning device onto the substrate,
- wherein the first pattern and the second pattern are combined to produce a desired patterned image on the substrate.
A method for manufacturing a device in a lithographic cluster, comprising:
- projecting a first pattern onto an area of a substrate coated with a developable material layer and a first resist layer;
- projecting a second pattern onto an area of the substrate coated with the developable material layer and a second resist layer;
- wherein projecting the first pattern and projecting the second pattern produces a desired patterned image on the developable material layer.
Dependencies are inferred from the claim text.