Series diode thermally assisted MRAM

An information storage device comprising:

• an array of magnetic memory elements;
• and
• a plurality of heating elements, each heating element comprising a diode, wherein voltage applied to one magnetic memory element and associated heating element causes reverse current to flow through the diode, thereby causing current to flow from the diode to the one resistive magnetic memory element, thereby heating the resistive magnetic memory element.

A method for heating an information storage device comprising a plurality of magnetic memory elements, said method comprising:

• applying voltage to a heating element connected in series with one magnetic memory element, said heating element comprising a diode;
• wherein applying voltage causes reverse current to flow through the diode, thereby heating the one magnetic memory element.

An information storage device comprising:

• an array of spin dependent tunneling (SDT) junctions;
• and
• an associated arrangement of heating elements, each heating element connected in series with one SDT junction, each heating element comprising a diode, wherein application of voltage in excess of breakdown voltage to the heating element causes reverse current to flow through the diode, thereby heating the SDT junction.