Pattern exposure method and apparatus
AssigneeHitachi Via Mechanics, Ltd.
InventorsYoshitada Oshida, Yoshitatsu Naito, Mituhiro Suzuki, Tsuyoshi Yamaguchi, Shigenobu Maruyama
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AssigneeHitachi Via Mechanics, Ltd.
InventorsYoshitada Oshida, Yoshitatsu Naito, Mituhiro Suzuki, Tsuyoshi Yamaguchi, Shigenobu Maruyama
Estimating the term…
A maskless exposure method and a maskless exposure apparatus in which maskless exposure can be performed efficiently with high-directivity illumination light, while the exposure efficiency of solder resist can be improved. Blue-violet semiconductor lasers 12A emitting laser beams 1a with a wavelength of 405 nm and ultraviolet semiconductor lasers 12B emitting laser beams 1b with a wavelength of 375 nm are provided to irradiate a substrate 8 with the laser beams 1a and 1b whose optical axes are made coaxial. In this event, one and the same place on the substrate 8 is irradiated with the laser beams 1a and 1b a plurality of times. Thus, the variation in intensity of the laser beams 1a and 1b is averaged.
A pattern exposure method for moving outgoing beams emitted from light sources and a work relatively so as to expose a desired position of the work to the outgoing beams, the pattern exposure method comprising the steps of:
A pattern exposure apparatus comprising:
Dependencies are inferred from the claim text.