Method of manufacturing a semiconductor device and a semiconductor device
OwnerHiroyuki Ikeda, Toshio Sasaki +3inventors
InventorsHiroyuki Ikeda, Toshio Sasaki, Akinobu Watanabe, Toshio Yamada, Akihisa Uchida
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OwnerHiroyuki Ikeda, Toshio Sasaki +3inventors
InventorsHiroyuki Ikeda, Toshio Sasaki, Akinobu Watanabe, Toshio Yamada, Akihisa Uchida
Estimating the term…
Wirings connected to a gate electrode of a slave switch circuit cell for substrate bias circuits are respectively electrically connected to a wiring for a power supply potential and a wiring for a reference potential. Thus, the switch operation of the slave switch circuit cell is made invalid. Wirings connected to n wells of respective circuit cells are electrically connected to a wiring for the power supply potential, and wirings connected to p wells of the respective circuit cells are electrically connected to the wiring. Thus, the n wells are fixed to the power supply potential, and the p wells are fixed to the reference potential.
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.