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US 2006/0214258 A1Published application
Semiconductor device and fabrication method of the same
OwnerMasahiro Kiyotoshiinventor
Life of this patent
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Abstract
A semiconductor device includes a first element isolation trench formed in a semiconductor substrate and having an STI (Shallow Trench Isolation) structure, a first insulating film formed in the first element isolation trench and mainly containing a metal oxide, and a polysilazane film formed on the first insulating film and filled in the first element isolation trench.
Claims20
A semiconductor device comprising:
- a first element isolation trench formed in a semiconductor substrate and having an STI (Shallow Trench Isolation) structure;
- a first insulating film formed in the first element isolation trench and mainly containing a metal oxide;
- and
- a polysilazane film formed on the first insulating film and filled in the first element isolation trench.
1 more element
A semiconductor device comprising:
- a first element isolation trench formed in a semiconductor substrate and having an STI structure;
- a first HSQ film formed in the first element isolation trench;
- and
- a polysilazane film formed on the first HSQ film and filled in the first element isolation trench.
1 more element
A semiconductor device manufacturing method comprising:
- forming a first element isolation trench having an STI structure in a semiconductor substrate;
- forming a first insulating film mainly containing a metal oxide in the first element isolation trench;
- forming a polysilazane film on the first insulating film;
- and
- forming a first STI region by planarizing the first insulating film and polysilazane film.
2 more elements
A semiconductor device manufacturing method comprising:
- forming a first element isolation trench having an STI structure in a semiconductor substrate;
- forming a first HSQ film in the first element isolation trench;
- forming a polysilazane film on the first HSQ film;
- and
- forming a first STI region by planarizing the first HSQ film and polysilazane film.
2 more elements
Dependencies are inferred from the claim text.