Semiconductor device and method for fabricating the same
AssigneeFujitsu Limited
InventorHiroshi Minakata
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Abstract
In the method for fabricating a semiconductor device, a polysilicon film is patterned to form a gate electrode 16, and a high dielectric constant insulating film 14 on a silicon substrate 10 and a device isolation film 12 on both sides of the gate electrode 16 is removed by dry etching using plasmas of a mixed gas of a base protection gas which combines with silicon to form a protection layer for protecting the silicon substrate 10 and the device isolation film 12, and an etching gas for etching the high dielectric constant insulating film 14.
Claims18
A method for fabricating a semiconductor device comprising the steps of:
- forming a high dielectric constant insulating film on a semiconductor substrate containing silicon;
- forming a conducting film on the high dielectric constant insulating film;
- patterning the conducting film to form a gate electrode;
- removing the high dielectric constant insulating film on the semiconductor substrate on both sides of the gate electrode by dry etching using plasmas of a mixed gas of a first gas which combines with silicon to form a protection layer for protecting the semiconductor substrate and a second gas for etching the high dielectric constant insulating film.
A semiconductor device comprising:
- a gate insulating film formed over a semiconductor substrate and formed of a high dielectric constant insulating film;
- a gate electrode formed on the gate insulating film;
- a sidewall insulating film formed on a side wall of the gate electrode;
- and
- source/drain regions formed in the semiconductor substrate on both sides of the gate electrode,
- a step between a surface of the semiconductor substrate immediately below the gate insulating film and a surface of the semiconductor substrate immediately below the sidewall insulating film being below 3 nm including 3 nm.
Dependencies are inferred from the claim text.