Semiconductor device
AssigneeNEC Electronics Corporation
InventorsKinya Ohtani, Kenya Kobayashi
Life of this patent
Estimating the term…
Abstract
A semiconductor device 1 is a vertical MOSFET, and includes a plurality of unit cells 10 and a gate electrode 20. Each unit cell 10 includes a back-gate region 12 formed in the semiconductor substrate and a source region 14 formed in the semiconductor substrate so as to adjacently surround the back-gate region 12 in a plan-view. A portion of the back-gate region 12 is adjacent to the gate electrode 20. More specifically, the back-gate region 12 is in a rectangular plan-view shape, and adjacent to the gate electrode 20 at a pair of opposing sides out of the four sides thereof.
Claims11
A semiconductor device comprising:
- a unit cell including a back-gate region provided in a semiconductor substrate and a source region provided adjacently around said back-gate region in a plan view;
- and
- a gate electrode provided in a trench provided in said semiconductor substrate so as to surround said unit cell;
- wherein said unit cell coincides in a plan view with a residual region that remains upon deducting from a surrounding region defined as the imaginary rectangular region being the smallest among those capable of containing said unit cell, a removed region constituting a part of said surrounding region;
- and
- a portion of said back-gate region is adjacent to said gate electrode in said removed region.
Dependencies are inferred from the claim text.