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US 2006/0214237 A1Published application
Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit
OwnerMatthew Metz, Suman Datta +4inventors
InventorsMatthew Metz, Suman Datta, Jack Kavalieros, Mark Doczy, Justin Brask, Robert Chau
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Abstract
Complementary metal oxide semiconductor integrated circuits may be formed with NMOS and PMOS transistors having different gate dielectrics. The different gate dielectrics may be formed, for example, by a replacement process. The gate dielectrics may differ in material, thickness, or formation techniques, as a few examples.
Claims8
an integrated circuit comprising:
- a substrate;
- and
- an NMOS transistor and a PMOS transistor, said NMOS and PMOS transistors formed on said substrate, said NMOS transistor and said PMOS transistor forming a complementary metal oxide semiconductor structure, said NMOS transistor and said PMOS transistor having different gate dielectrics, one of said transistors having a gate dielectric with a dielectric constant greater than 10 and the other of said transistors having a gate dielectric with a dielectric constant of less than 10.
Dependencies are inferred from the claim text.