Semiconductor device and image display apparatus

A semiconductor device comprising a semiconductor element having a semiconductor layer, an insulation film, and an electrode formed on a predetermined substrate, wherein said semiconductor element comprises

• a first impurity region formed at said semiconductor layer,
• a second impurity region formed at said semiconductor layer with a distance from said first impurity region,
• a channel region functioning as a channel having a predetermined channel length, formed at a portion of said semiconductor layer between said first impurity region and said second impurity region with respective distances from said first impurity region and said second impurity region,
• a third impurity region formed in contact with said channel region at a portion of said semiconductor layer between said second impurity region and said channel region, and
• a fourth impurity region formed at a portion of said semiconductor layer between said second impurity region and said third impurity region, and
• a fifth impurity region formed at a portion of said semiconductor layer between said first impurity region and said channel region,
• wherein, in said semiconductor element,
• said electrode has one side and another side opposite to each other,
• said fourth impurity region is coupled with said second impurity region and said third impurity region,
• said fifth impurity region is coupled with said first impurity region,
• an end of said fifth impurity region at said channel region side is located substantially on a same plane as said one side, and a junction between said third impurity region and said fourth impurity region is located substantially on a same plane as said another side,
• said electrode is formed overlapping with and facing each of said channel region and said third impurity region entirely,
• said insulation film is formed between said semiconductor layer and said electrode so as to come into contact with each of said semiconductor layer and said electrode,
• an impurity concentration of each of said third to fifth impurity regions is set lower than the impurity concentration of each of said first impurity region and said second impurity region, and higher than the impurity concentration of said channel region,
• the impurity concentration of said third impurity region is set to be different from the impurity concentration of each of said fourth impurity region and said fifth impurity region, and
• a length of said fifth impurity region in a direction of a channel length is set shorter than the length of said fourth impurity region in the direction of the channel length.

An image display apparatus comprising an image display circuit unit to display an image,

• said image display circuit unit including a semiconductor element having a semiconductor layer, an insulation film, and an electrode formed on a predetermined substrate, wherein
• said semiconductor element comprises at least one of a first element and a second element,
• said first element including
• a first impurity region formed at said semiconductor layer,
• a second impurity region formed at said semiconductor layer with a distance from said first impurity region,
• a channel region functioning as a channel having a predetermined channel length, formed at a portion of said semiconductor layer between said first impurity region and said second impurity region,
• a third impurity region formed in contact with said channel region at a portion of said semiconductor layer between said second impurity region and said channel region, and
• a fourth impurity region formed at a portion of said semiconductor layer between said second impurity region and said third impurity region,
• wherein, in said first element,
• said electrode has one side and another side opposite to each other,
• said fourth impurity region is coupled with said second impurity region and said third impurity region,
• an end of said first impurity region at said channel region side is located substantially on a same plane as said one side, and a junction between said third impurity region and said fourth impurity region is located substantially on a same plane as said another side,
• said electrode is formed overlapping with and facing each of said channel region and said third impurity region entirely,
• said insulation film is formed between said semiconductor layer and said electrode so as to come into contact with each of said semiconductor layer and said electrode,
• an impurity concentration of each of said third and fourth impurity regions is set lower than the impurity concentration of each of said first impurity region and said second impurity region, and higher than the impurity concentration of said channel region, and
• the impurity concentration of said third impurity region is set to be different from the impurity concentration of said fourth impurity region,
• said second element including
• a fifth impurity region formed at said semiconductor layer,
• a sixth impurity region formed at said semiconductor layer with a distance from said fifth impurity region,
• a channel region functioning as a channel having a predetermined channel length, formed at a portion of said semiconductor layer between said fifth impurity region and said sixth impurity region with respective distances from said fifth impurity region and said sixth impurity region,
• a seventh impurity region formed in contact with said channel region at a portion of said semiconductor layer between said sixth impurity region and said channel region,
• an eighth impurity region formed at a portion of said semiconductor layer between said sixth impurity region and said seventh impurity region,
• a ninth impurity region formed at a portion of said semiconductor layer between said fifth impurity region and said channel region,
• wherein, in said second element,
• said electrode has one side and another side opposite to each other,
• said eighth impurity region is coupled with said sixth impurity region and said seventh impurity region,
• said ninth impurity region is coupled with said fifth impurity region,
• an end of said ninth impurity region at said channel region side is located substantially on a same plane as said one side, and a junction between said seventh impurity region and said eighth impurity region is located substantially on the same plane as said another side,
• said electrode is formed overlapping with and facing each of said channel region and said seventh impurity region entirely,
• said insulation film is formed between said semiconductor layer and said electrode so as to come in contact with said semiconductor layer and said electrode, respectively,
• the impurity concentration of each of said seventh to ninth impurity regions is set lower than the impurity concentration of each of said fifth impurity region and said sixth impurity region, and higher than the impurity concentration of said channel region,
• the impurity concentration of said seventh impurity region is set to be different from the impurity concentration of each of said eighth impurity region and said ninth impurity region, and
• a length of said ninth impurity region in the direction of the channel length is set shorter than the length of said eighth impurity region in the direction of the channel length.