Semiconductor device and process for producing the same
AssigneeTadahiro Ohmi
InventorsTadahiro Ohmi, Akinobu Teramoto
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprising a substrate of SiC provided with an insulating film through plasma treatment. Rare gas is incorporated in the insulating film. Preferably, at least one of krypton (Kr), argon (Ar) and xenon (Xe) is used as the rare gas. A combination of oxygen gas and krypton (Kr) is especially preferred.
Claims24
A semiconductor device characterized by comprising
- a semiconductor substrate made of SiC;
- and
- an insulating film formed on said semiconductor substrate,
- wherein said insulating film is formed by a plasma treatment and contains a rare gas at least partly.
A semiconductor device characterized by comprising
- a semiconductor substrate made of single-crystal SiC;
- and
- an insulating film including a gate insulating film formed on said semiconductor substrate,
- wherein said insulating film is formed by a plasma treatment,
- said insulating film contains at least one of krypton (Kr), argon (Ar), and xenon (Xe) as a rare gas,
- at least part of said insulating film is one of an oxide film, an oxynitride film, and a nitride film, and
- said insulating film is formed by one of direct oxidation, direct nitriding, and direct oxynitriding of a microwave-excited plasma under a condition where a temperature of the substrate is 600° C. or less.
A semiconductor device characterized by comprising
- a semiconductor substrate made of single-crystal SiC;
- and
- an insulating film including a gate insulating film formed on said semiconductor substrate,
- wherein said insulating film is formed by a plasma treatment,
- said insulating film contains at least one of krypton (Kr), argon (Ar), and xenon (Xe) as a rare gas,
- at least part of said insulating film is one of an oxide film, an oxynitride film, and a nitride film, and
- said insulating film is formed by one of oxidation, nitriding, and oxynitriding by microwave-excited plasma CVD under a condition where a temperature of the substrate is 600° C. or less.
A semiconductor device characterized by comprising
- a semiconductor substrate made of single-crystal SiC;
- and
- an insulating film including a gate insulating film formed on said semiconductor substrate,
- wherein said insulating film is formed by a plasma treatment,
- said insulating film contains at least one of krypton (Kr), argon (Ar), and xenon (Xe) as a rare gas,
- at least part of said insulating film is one of an oxide film, an oxynitride film, and a nitride film, and
- said insulating film is formed, under a condition where a temperature of the substrate is 600° C. or less, by one of direct oxidation, direct nitriding, and direct oxynitriding of a microwave-excited plasma and then by one of oxidation, nitriding, and oxynitriding by microwave-excited plasma CVD.
A semiconductor device manufacturing method characterized by forming an insulating film by a plasma treatment on a semiconductor substrate made of SiC.
A semiconductor device manufacturing method for forming an insulating film including a gate insulating film by a plasma treatment on a semiconductor substrate made of single-crystal SiC, said method characterized by
- using at least one of krypton (Kr), argon (Ar), and xenon (Xe) as a rare gas when forming said insulating film,
- at least part of said insulating film being one of an oxide film, an oxynitride film, and a nitride film, and
- forming said insulating film by one of direct oxidation, direct nitriding, and direct oxynitriding of a microwave-excited plasma under a condition where a temperature of the substrate is 600° C. or less.
A semiconductor device manufacturing method for forming an insulating film including a gate insulating film by a plasma treatment on a semiconductor substrate made of single-crystal SiC, said method characterized by
- using at least one of krypton (Kr), argon (Ar), and xenon (Xe) as a rare gas when forming said insulating film,
- at least part of said insulating film being one of an oxide film, an oxynitride film, and a nitride film, and
- forming said insulating film by one of oxidation, nitriding, and oxynitriding by microwave-excited plasma CVD under a condition where a temperature of the substrate is 600° C. or less.
A semiconductor device manufacturing method for forming an insulating film including a gate insulating film by a plasma treatment on a semiconductor substrate made of single-crystal SiC, said method characterized by
- using at least one of krypton (Kr), argon (Ar), and xenon (Xe) as a rare gas when forming said insulating film,
- at least part of said insulating film being one of an oxide film, an oxynitride film, and a nitride film, and
- forming said insulating film, under a condition where a temperature of the substrate is 600° C. or less, by one of direct oxidation, direct nitriding, and direct oxynitriding of a microwave-excited plasma and then by one of oxidation, nitriding, and oxynitriding by microwave-excited plasma CVD.
Dependencies are inferred from the claim text.