Junction semiconductor device and method for manufacturing the same

A junction semiconductor device comprising:

• a drain region comprising a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal,
• a source region comprising a low-resistance layer of a first conductive type formed on the other surface of said semiconductor crystal,
• a gate region of a second conductive type formed on the periphery of said source region,
• a high-resistance layer of a first conductive type between said source region and said drain region, and
• a recombination-inhibiting semiconductor layer of a first conductive type provided in the vicinity of the surface of said semiconductor crystal between said gate region and said source region.

A method for manufacturing a junction semiconductor device, comprising:

• forming a high-resistance layer of a first conductive type on one surface of a semiconductor substrate of the first conductive type,
• forming a low-resistance layer of a first conductive type that acts as a source region on said high-resistance layer of a first conductive type,
• forming a gate region of a second conductive type at the periphery of said source region,
• forming a recombination-inhibiting semiconductor layer of a second conductive type in the vicinity of the surface of the high-resistance layer between said gate region and said source region,
• forming a recombination-inhibiting film on the semiconductor crystal surface between said gate region and said source region,
• joining a source electrode on said source region and a gate electrode on said gate region, and a drain electrode on the other surface of said semiconductor substrate, and
• forming an upper layer electrode above the source electrode and the gate electrode.

A method for manufacturing a junction semiconductor device, comprising:

• forming a high-resistance layer of a first conductive type on one surface of a semiconductor substrate of the first conductive type,
• forming a low-resistance layer of a first conductive type that acts as a source region on said high-resistance layer of a first conductive type,
• forming a gate region of a second conductive type at the periphery of said source region,
• forming a recombination-inhibiting semiconductor layer of a first conductive type in the vicinity of the surface of the high-resistance layer between said gate region and said source region,
• forming a recombination-inhibiting film on the semiconductor crystal surface between said gate region and said source region,
• forming a source electrode on said source region, a gate electrode on said gate region, and a drain electrode on the other surface of said semiconductor substrate, and
• forming an upper layer electrode above the source electrode and the gate electrode.