Semiconductor device and method of manufacturing the device based on evaluation data of test transistors uniformly arranged on test wafer
OwnerMikinori Oguniinventor
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Abstract
This patent specification describes a method of manufacturing semiconductor device which includes providing a test wafer having a plurality of test transistors formed on a substrate and uniformly arranged in a substantially whole area of the test wafer, measuring characteristic of the test transistors and implanting onto a manufacturing wafer with adjusted dosage of the implantation at each position of the wafer based on the measured result of the distribution of the characteristic of the test transistors such that each transistor has an equal characteristic.
Claims18
A test wafer comprising:
- a substrate;
- and
- a plurality of test transistors formed on the substrate and uniformly arranged in a substantially whole area of the test wafer.
A method for evaluating a dosage distribution of ion implantation, comprising the steps of:
- providing a test wafer which includes a plurality of test transistors formed on a substrate and uniformly arranged in a substantially whole area of the test wafer;
- and
- measuring characteristic of the test transistors.
A method for manufacturing semiconductor device, comprising the steps of:
- providing a test wafer which includes a plurality of test transistors formed on a substrate and uniformly arranged in a substantially whole area of the test wafer;
- measuring characteristic of the test transistors;
- and
- implanting onto a manufacturing wafer with adjusted dosage of the implantation at each position of the wafer based on the measured result of the distribution of the characteristic of the test transistors such that each transistor has an equal characteristic.
Dependencies are inferred from the claim text.