Stressed organic semiconductor

Abstract

A semiconductor device including: a substrate and an organic semiconductor material coupled to the substrate at an interface therebetween. The substrate has a first thermal expansion coefficient and the organic semiconductor material has a second thermal expansion coefficient that is different from the first thermal expansion coefficient. The difference between the first thermal expansion coefficient and the second thermal expansion coefficient causes a tensile stress in a plane parallel to the interface to be transferred from the substrate to the organic semiconductor material through the interface. This tensile stress in the plane parallel to the interface causes compression of the organic semiconductor material in a direction normal to the interface.

Dependencies are inferred from the claim text.