Semiconductor photodetector and method for manufacturing same
AssigneeATMEL Germany GmbH
InventorHoger Hoehnemann
Life of this patent
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Abstract
A semiconductor photodetector and method for producing the semiconductor photodetector are provided that includes a semiconductor substrate; semiconductor areas provided above the semiconductor substrate that have suitable dopings to form a space-charge zone for detecting electromagnetic radiation incident from above; at least two semiconductor mirror layers having different refractive indices are provided between the space-charge zone and semiconductor substrate to form a Bragg reflector for reflecting the radiation to be detected in the direction of the space-charge zone.
Claims24
A semiconductor photodetector comprising:
- a semiconductor substrate;
- semiconductor areas provided above the semiconductor substrate, having dopings to form a space-charge zone for detecting electromagnetic radiation;
- and
- at least two semiconductor mirror layers having different refractive indices are provided between the space-charge zone and the semiconductor substrate to form a Bragg reflector for reflecting the radiation that is to be detected towards the space-charge zone.
A method for manufacturing a semiconductor photodetector, the method comprising the steps of:
- providing a semiconductor substrate;
- forming semiconductor regions above the semiconductor substrate, the semiconductor regions having suitable dopings to form a space-charge zone for detecting electromagnetic radiation incident from above;
- and
- forming at least two semiconductor mirror layers having different refractive indices between the space-charge zone and the semiconductor substrate to form a Bragg reflector for reflecting radiation, which is to be detected, in a direction towards the space-charge zone.
Dependencies are inferred from the claim text.