Machine specific and machine group correction of masks based on machine subsystem performance parameters
OwnerAdlai Smith, Robert Hunterinventors
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OwnerAdlai Smith, Robert Hunterinventors
Estimating the term…
Determining corrections for a mask used in photolithography includes assembling characteristics of a mask design and an as-drawn specification into a virtual reticle. Assembling characteristics of machine subsystem parameters into a virtual wafer. Emulating machine performance on the virtual reticle and virtual wafer and accumulating the results in an updated virtual wafer. Comparing metrics of the updated virtual wafer to the as-drawn specification and if the comparison meets or exceeds a desired threshold, then incorporating mask clips of the virtual reticle into a final mask design, if the comparison does not meet the desired threshold, then calculating mask corrections, updating the virtual reticle, and repeating emulating and comparing.
A method of determining corrections for a mask used in photolithography, the method comprising:
A method of determining corrections for a mask used in photolithography, the method comprising:
A projection imaging tool comprising:
A projection imaging tool within a group of projection imaging tools, the projection imaging tool comprising:
A data processing system for determining corrections for a mask used in photolithography, the method comprising:
A data processing system for determining corrections for a mask used in photolithography, the method comprising:
A program for use in a computer device that executes program instructions recorded in a computer-readable media to perform a method for determining corrections for a mask used in photolithography, the program comprising:
A program for use in a computer device that executes program instructions recorded in a computer-readable media to perform a method for determining corrections for a mask used in a group of photolithographic machines, the program comprising:
Dependencies are inferred from the claim text.