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US 2006/0189172 A1Published application
Method using specific contact angle for immersion lithography
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBang-Ching Ho, Jen-Chieh Shih
Life of this patent
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Abstract
A method for performing immersion lithography on a semiconductor wafer is disclosed. The method includes positioning the semiconductor wafer beneath a lens and applying a fluid between a top surface of the semiconductor wafer and the lens. An additive can be provided to the top surface so that any droplet of the fluid that forms on the top surface of the semiconductor wafer will have a contact angle between about 40° and about 80°.
Claims11
A semiconductor device comprising:
- a substrate;
- a top layer above the substrate, the top layer for use in an immersion lithography process and having a composition such that a fluid droplet that may occur during the immersion lithographic process will have a contact angle between about 400 and about 80°.
Dependencies are inferred from the claim text.