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US 2006/0189149 A1Published application
Method of smoothening dielectric layer
AssigneeMec A/S
InventorsWen-Long Lee, Jun Wu, Shih-Chi Lin, Chyi-Tsong Ni
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Abstract
A method of smoothening a dielectric layer. First, a substrate is provided. Next, a dielectric layer is formed on the semiconductor substrate. Finally, the dielectric layer is smoothened by a plasma treatment employing a silane based gas and a nitrogen based gas.
Claims20
A method of forming a dielectric layer, comprising:
- providing a substrate;
- forming a dielectric layer on the semiconductor substrate;
- and
- providing a treatment employing a silane based gas and a nitrogen based gas on the dielectric layer.
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A method of smoothening a dielectric layer, comprising:
- providing a substrate;
- forming a dielectric layer on the semiconductor substrate;
- and
- smoothening the dielectric layer by a plasma treatment.
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A method of smoothening a dielectric layer, comprising:
- providing a substrate in a chamber;
- introducing precursors into the chamber at the first time so as to deposit a dielectric layer on the substrate;
- and
- introducing the precursors into the chamber at the second time so as to smoothen the dielectric layer.
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Dependencies are inferred from the claim text.