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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsDah-Chung Oweyang, Chih-Cheng Lin, Hsueh-Liang Hung, Bang-Chein Ho
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In the manufacture of a semiconductor, a DBARC layer is deposited upon a wafer to prevent reflection. A photo resist layer is deposited upon the DBARC layer and the wafer is selectively exposed to irradiation. The irradiation generates photo acid (H+ ions) in the exposed areas of the photo resist and DBARC. In order to provide better resolution in the DBARC for micro-features, an electric field is generated vertically through the coated wafer before or during post exposure baking (PEB) to create a uniform vertical distribution of H+ ions though the DBARC. The coated wafer is then developed to remove either the unexposed portions, or exposed portion of the DBARC. The cavities formed by the developer have side walls that are substantially vertical as a result of the uniform vertical distribution of the H+ ions.
In a method of making a semiconductor device including the steps of coating a substrate with a bottom anti-reflection coating layer, forming a resist film over the anti reflection coating layer;
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A method for patterning micro features by using developable bottom anti-reflection coating comprising:
A method to obtain a vertical distribution of photo acid in a selected portion of a developable bottom anti-reflective coating layer, comprising:
Dependencies are inferred from the claim text.