Method of forming isolated features of semiconductor devices
AssigneeInfineon Technologies AG
InventorUwe Schroeder
Life of this patent
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Abstract
A method of forming isolated features of semiconductor devices is disclosed. A first hard mask is deposited over a material layer to be patterned, and a second hard mask is deposited over the first hard mask. The second hard mask is patterned with a pattern for an array of features using an off-axis lithography method. A portion of the pattern for the array of features is transferred to the first hard mask. The first hard mask is then used as a mask to pattern the material layer.
Claims24
A method of patterning a material layer of a semiconductor device, the method comprising:
- providing a workpiece, a material layer being disposed over the workpiece;
- depositing a first layer of masking material over the material layer;
- forming a second layer of masking material over the first layer of masking material, the second layer of masking material comprising a first pattern;
- forming a third layer of masking material over the second layer of masking material, the third layer of masking material comprising a second pattern, at least a portion of the second pattern being larger than the first pattern;
- using the third layer of masking material and the second layer of masking material as a mask to pattern the first layer of masking material;
- and
- using at least the first layer of masking material as a mask to pattern the material layer.
A method of patterning a material layer of a semiconductor device, the method comprising:
- providing a workpiece;
- forming a material layer over the workpiece;
- depositing a first hard mask over the material layer;
- depositing a second hard mask over the first hard mask, wherein the first hard mask comprises a material that is etchable selective to the second hard mask;
- depositing an anti-reflective coating over the second hard mask;
- depositing a first layer of resist over the anti-reflective coating;
- patterning the first layer of resist with a first pattern using an off-axis lithography method;
- using the first layer of resist as a mask to remove exposed portions of the anti-reflective coating and the second hard mask, patterning the second hard mask and leaving portions of the first hard mask exposed;
- removing the first layer of resist and the anti-reflective coating;
- depositing a second layer of resist over the patterned second hard mask and exposed portions of the first hard mask;
- patterning the second layer of resist with a second pattern using an on-axis lithography method, the second pattern being different from the first pattern;
- using the second layer of resist and the patterned second hard mask as a mask to remove exposed portions of the first hard mask;
- removing at least the second layer of resist;
- and
- using the first hard mask as a mask to remove portions of the material layer, patterning the material layer.
A method of patterning a material layer of a semiconductor device, the method comprising:
- providing a workpiece;
- forming a material layer over the workpiece;
- depositing a first hard mask over the material layer;
- depositing a second hard mask over the first hard mask, the second hard mask comprising a different material than the first hard mask;
- patterning the second hard mask with a first pattern for an array of features using an off-axis lithography method;
- transferring a portion of the first pattern for the array of features to the first hard mask;
- and
- using the first hard mask as a mask to pattern the material layer.
Dependencies are inferred from the claim text.