Suppressing formation of metal silicides on semiconductor surfaces

Abstract

The present invention provides for compositions and methods of modifying a semiconductor structure, the structure including a semiconductor material, silicon, or germanium. The methods include modifying at the atomic scale at least one surface of the structure and forming a low-reactivity surface, contacting the at least one surface with at least one metal, and annealing the at least one metal to the at least one surface at a temperature ranging from room temperature to at least about 750 degrees Centigrade. The methods prevent the formation of high resistance phases of a metal silicide. The methods also prevent metal silicide formation at temperatures below at least about 500 degrees Centigrade and provide for only low resistance phases of the metal silicide at temperatures above at least about 500 degrees Centigrade. The methods further provide for compositions with improved performance.

Dependencies are inferred from the claim text.