Semiconductor device and method for fabricating the same
AssigneePanasonic Corporation
InventorsYasutoshi Okuno, Michikazu Matsumoto
Life of this patent
Estimating the term…
Abstract
A gate electrode is formed on a silicon substrate, and then source/drain regions are formed at both sides of the gate electrode in the silicon substrate. Thereafter, an alloyed silicide layer is formed on the source/drain regions. The step of forming the alloyed silicide layer includes the step of depositing a first metal film, a nickel film and a second metal film in this order to form a multilayer metal film and the step of performing heat treatment after the formation of the multilayer metal film.
Claims9
A method for fabricating a semiconductor device, the method comprising the steps of:
- forming a gate electrode on a silicon substrate;
- forming source/drain regions at both sides of the gate electrode in the silicon substrate;
- and
- forming an alloyed silicide layer on the source/drain regions,
- wherein the step of forming the alloyed silicide layer includes the step of depositing a first metal film, a nickel film and a second metal film in this order to form a multilayer metal film and the step of performing heat treatment after the formation of the multilayer metal film.
A semiconductor device, comprising:
- a gate electrode formed on a silicon substrate:
- source/drain regions formed at both sides of the gate electrode in the silicon substrate;
- and
- an alloyed silicide layer formed on the source/drain regions,
- wherein the alloyed silicide layer is made of alloyed Ni silicide formed by reaction between the silicon substrate and a multilayer metal film formed by depositing a first metal film, a nickel film and a second metal film in this order.
Dependencies are inferred from the claim text.